? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 500 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 500 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 63 a i dm t c = 25 ? c, pulse width limited by t jm 330 a i a t c = 25 ? c 66a e as t c = 25 ? c2j dv/dt i s ? i dm , v dd ? v dss , t j ? 150 ? c 35 v/ns p d t c = 25 ? c 520 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 ?????????????????? v~ f c mounting force 50..200 / 11..45 n/lb weight 8 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ????????????????????? 200 na i dss v ds = v dss , v gs = 0v 50 ? a note 2, t j = 125 ? c 3 ma r ds(on) v gs = 10v, i d = 66a, note 1 43 m ? MMIX1F132N50P3 v dss = 500v i d25 = 63a r ds(on) ? ? ? ? ? 43m ? ? ? ? ? t rr ? ? ? ? ? 250ns ds100475b(6/14) n-channel enhancement mode avalanche rated fast intrinsic rectifier features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v~ electrical isolation ? avalanche rated ? low package inductance ? fast intrinsic rectifier ? low r ds(on) advantages ? easy to mount ? space savings applications ? dc-dc converters ? battery chargers ? switch-mode and resonant-mode power supplies ? uninterrupted power supplies ? ac motor drives ? high speed power switching applications polar3 tm hiperfet tm power mosfet (electrically isolated tab) g d s isolated tab d s g g = gate d = drain s = source
MMIX1F132N50P3 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 68 110 s c iss 18.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1710 pf c rss 12 pf r gi gate input resistance 1.16 ?? t d(on) 42 ns t r 19 ns t d(off) 90 ns t f 15 ns q g(on) 267 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 66a 95 nc q gd 63 nc r thjc 0.24 ?? c/w r thcs 0.05 ? c/w r thja 30 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. i s v gs = 0v 132 a i sm repetitive, pulse width limited by t jm 530 a v sd i f = 100a, v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.9 ?? c i rm 16.4 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 66a r g = 1 ? (external) i f = 66a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. part must be heatsunk for high-temp i dss measurement.
? 2014 ixys corporation, all rights reserved MMIX1F132N50P3 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0123456 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 v ds - volts i d - amperes 5v 6v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 66a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 132a i d = 66a fig. 5. r ds(on) normalized to i d = 66a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 50 100 150 200 250 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
MMIX1F132N50P3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v gs - volts v ds = 250v i d = 66a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit
? 2014 ixys corporation, all rights reserved MMIX1F132N50P3 fig. 14. resistive turn-on rise time vs. drain current 10 12 14 16 18 20 22 24 26 28 30 30 40 50 60 70 80 90 100 i d - amperes t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 250v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 12345678910 r g - ohms t r - nanoseconds 0 20 40 60 80 100 120 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 250v i d = 100a i d = 66a fig. 16. resistive turn-off switching times vs. junction temperature 10 12 14 16 18 20 22 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 85 90 95 100 105 110 115 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 250v i d = 100a i d = 66a fig. 13. resistive turn-on rise time vs. junction temperature 12 14 16 18 20 22 24 26 28 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 250v i d = 100a i d = 66a fig. 17. resistive turn-off switching times vs. drain current 5 10 15 20 25 30 35 30 40 50 60 70 80 90 100 i d - amperes t f - nanoseconds 70 80 90 100 110 120 130 t d ( o f f ) - nanoseconds t f t d(off ) - - - - r g = 1 ? , v gs = 10v v ds = 250v t j = 125oc t j = 25oc fig. 18. resistive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 12345678910 r g - ohms t f - nanoseconds 0 80 160 240 320 400 480 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 250v i d = 66a i d = 100a
MMIX1F132N50P3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_132n50p3(k9-w38) 6-02-14-a
? 2014 ixys corporation, all rights reserved pin: 1 = gate 5-12 = source 13-24 = drain package outline MMIX1F132N50P3
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